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| DISCRETE SEMICONDUCTORS DATA SHEET BSP145 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC07 1995 Apr 24 Philips Semiconductors Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES * Direct interface to C-MOS, TTL, etc. * High speed switching * No secondary breakdown. APPLICATIONS * Intended for applications in relay, high speed and line transformer drivers. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 plastic SMD package. PINNING - SOT223 PIN 1 2 3 4 SYMBOL g d s d DESCRIPTION gate drain source drain CAUTION handbook, halfpage BSP145 4 d g 1 Top view 2 3 MAM054 s Fig.1 Simplified outline and symbol. The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA SYMBOL VDS VGSO VGSth ID RDSon Ptot PARAMETER drain-source voltage gate-source voltage gate-source threshold voltage drain current drain-source on-state resistance total power dissipation ID = 100 mA; VGS = 10 V up to Tamb = 25 C open drain ID = 1 mA; VDS = VGS CONDITIONS - - 3 - 10 - TYP. MAX. 450 20 4 250 14 1.5 V V V mA W UNIT 1995 Apr 24 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGSO ID IDM Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current peak drain current total power dissipation storage temperature operating junction temperature up to Tamb = 25 C; note 1 open drain CONDITIONS MIN. - - - - - -65 - BSP145 MAX. 450 20 250 1 1.5 +150 150 UNIT V V mA A W C C THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 83.3 UNIT K/W Note to the "Limiting values" and "Thermal characteristics" 1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm; mounting pad for drain lead minimum 6 cm2. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS VGSth IDSS IGSS RDSon yfs Ciss Coss Crss ton toff PARAMETER drain-source breakdown voltage gate-source threshold voltage drain-source leakage current gate leakage current drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance CONDITIONS VGS = 0; ID = 10 A VDS = VGS ; ID = 1 mA VGS = 0; VDS = 350 V VDS = 0; VGS = 20 V VGS = 10 V; ID = 100 mA VDS = 25 V; ID =250 mA VGS = 0; VDS = 25 V; f = 1 MHz VGS = 0; VDS = 25 V; f = 1 MHz VGS = 0; VDS = 25 V; f = 1 MHz VGS = 0 to 10 V; VDD = 200 V; ID = 100 mA VGS = 10 to 0 V; VDD =200 V; ID = 100 mA MIN. 450 2 - - - 200 - - - - - TYP. - 3 - - 10 - 90 25 2 - - MAX. - 4 1 100 14 - 120 35 5 UNIT V V A nA mS pF pF pF Switching times (see Figs 2 and 3) turn-on time turn-off time 10 100 ns ns 1995 Apr 24 3 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP145 handbook, halfpage VDD = 50 V handbook, halfpage 90 % INPUT 10 % 10 V 0V ID 50 90 % OUTPUT 10 % MSA631 ton toff MBB692 Fig.2 Switching time test circuit. Fig.3 Input and output waveforms. handbook, halfpage 2 MRC207 handbook, halfpage 1 MGC433 Ptot (W) 1.5 ID (A) 1 (1) tp = 10 s 100 s 1 ms 10 ms 100 ms 10 1 2 P 10 = T tp 1s 0.5 tp T t DC 0 0 50 100 Tamb (C) 150 10 3 1 10 10 2 V DS (V) 10 3 = 0.01. Tamb = 25 C. (1) RDSon limitation. Fig.4 Power derating curve. Fig.5 DC SOAR. 1995 Apr 24 4 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP145 MGC431 MGC436 handbook, halfpage 120 handbook, halfpage 1 C (pF) ID (A) VGS = 10 V 6V 0.8 80 C iss 0.6 5V 0.4 40 Coss C rss 0 10 20 V DS (V) 30 0 0 4 8 12 0.2 4.5 V 4V 0 16 V DS (V) VGS = 0. Tj = 25 C. f = 1 MHz. Tj = 25 C. Fig.6 Capacitance as a function of drain source voltage; typical values. Fig.7 Typical output characteristics. MGC435 MGC438 handbook, halfpage 1 handbook, halfpage 30 ID (A) R DS () on 0.5 15 0 0 5 V GS (V) 10 0 0 5 VGS (V) 10 ID = 10 mA. Tj = 25 C. VDS = 10 V. Tj = 25 C. Fig.9 Fig.8 Typical transfer characteristics. Drain-source on-state resistance as a function of gate-source voltage; typical values. 1995 Apr 24 5 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP145 handbook, halfpage 60 MGC437 handbook, halfpage 1.2 MGC434 R DS () on VGS = 4 V 4.5 V 5 V k 40 1.0 20 6V 0.8 10 V 03 10 0.6 I D (A) 1 50 50 T j ( o C) 150 10 2 10 1 V GSth at T j k = ---------------------------------------V GSth at 25 C Tj = 25 C. ID = 1 mA; VDS = VGS. Fig.10 Drain-source on-state resistance as a function of drain current; typical values. Fig.11 Temperature coefficient of gate-source threshold voltage. handbook, halfpage 2.5 MLC695 k 2 1.5 1 0.5 0 -50 0 50 100 Tj (C) 150 R DSon at T j k = ---------------------------------------R DSon at 25 C Fig.12 Temperature coefficient of drain-source on-state resistance. 1995 Apr 24 6 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP145 10 2 handbook, full pagewidth R th j-a (K/W) MGC432 = 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 1 0.01 P = T tp tp T 10 1 t 0 6 10 10 5 10 4 10 3 10 2 10 1 1 10 10 2 t p (s) 10 3 Tamb = 25 C. Fig.13 Thermal resistance from junction to ambient as a function of pulse time; typical values. 1995 Apr 24 7 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor PACKAGE OUTLINE BSP145 andbook, full pagewidth 0.95 0.85 S 0.32 0.24 seating plane 6.7 6.3 3.1 2.9 0.1 S B 4 0.2 M A A 0.10 0.01 3.7 3.3 o 7.3 6.7 16 o max 16 1 1.80 max 10 max o 2 2.3 4.6 0.80 0.60 3 0.1 M B (4x) MSA035 - 1 Dimensions in mm. Fig.14 SOT223. 1995 Apr 24 8 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BSP145 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Apr 24 9 |
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